High voltage three-dimensional devices having dielectric liners

ABSTRACT

High voltage three-dimensional devices having dielectric liners and methods of forming high voltage three-dimensional devices having dielectric liners are described. For example, a semiconductor structure includes a first fin active region and a second fin active region disposed above a substrate. A first gate structure is disposed above a top surface of, and along sidewalls of, the first fin active region. The first gate structure includes a first gate dielectric composed of a first dielectric layer disposed on the first fin active region, and a second, different, dielectric layer disposed on the first dielectric layer. The semiconductor structure also includes a second gate structure disposed above a top surface of, and along sidewalls of, the second fin active region. The second gate structure includes a second gate dielectric composed of the second dielectric layer disposed on the second fin active region.

TECHNICAL FIELD

Embodiments of the invention are in the field of semiconductor devicesand processing and, in particular, high voltage three-dimensionaldevices having dielectric liners and methods of forming high voltagethree-dimensional devices having dielectric liners.

BACKGROUND

For the past several decades, the scaling of features in integratedcircuits has been a driving force behind an ever-growing semiconductorindustry. Scaling to smaller and smaller features enables increaseddensities of functional units on the limited real estate ofsemiconductor chips. For example, shrinking transistor size allows forthe incorporation of an increased number of memory or logic devices on achip, lending to the fabrication of products with increased capacity.The drive for ever-more capacity, however, is not without issue. Thenecessity to optimize the performance of each device becomesincreasingly significant.

In the manufacture of integrated circuit devices, multi-gatetransistors, such as tri-gate transistors, have become more prevalent asdevice dimensions continue to scale down. In conventional processes,tri-gate transistors are generally fabricated on either bulk siliconsubstrates or silicon-on-insulator substrates. In some instances, bulksilicon substrates are preferred due to their lower cost and becausethey enable a less complicated tri-gate fabrication process. In otherinstances, silicon-on-insulator substrates are preferred because of theimproved short-channel behavior of tri-gate transistors.

Scaling multi-gate transistors has not been without consequence,however. As the dimensions of these fundamental building blocks ofmicroelectronic circuitry are reduced and as the sheer number offundamental building blocks fabricated in a given region is increased,the constraints on the lithographic processes used to pattern thesebuilding blocks have become overwhelming. In particular, there may be atrade-off between the smallest dimension of a feature patterned in asemiconductor stack (the critical dimension) and the spacing betweensuch features.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates cross-sectional views of (A) a standard high voltagetransistor and (B) a scaled high voltage transistor, in accordance withan embodiment of the present invention.

FIG. 2A illustrates a cross-sectional view of a standard low voltagetransistor.

FIG. 2B illustrates a cross-sectional view of a standard high voltagetransistor.

FIG. 2C illustrates a cross-sectional view of a low voltage transistorafter scaling of the pitch, in accordance with an embodiment of thepresent invention.

FIG. 2D illustrates a cross-sectional view of a scaled high voltagetransistor, in accordance with an embodiment of the present invention.

FIG. 3 illustrates cross-sectional views of (A) a standard high voltagetransistor, (B) a scaled high voltage transistor, and (C) a scaled highvoltage transistor having an inner dielectric spacer, in accordance withan embodiment of the present invention.

FIGS. 4A-4F illustrate cross-sectional views representing variousoperations in a method of fabricating a semiconductor structure, inaccordance with an embodiment of the present invention, with:

FIG. 4A illustrating a starting structure including a plurality of finsformed above a substrate 402;

FIG. 4B illustrating a plurality of dummy gate structures formedorthogonal to the plurality of fins of FIG. 4A;

FIG. 4C illustrating contacts and/or isolation regions formed betweengates of the plurality of dummy gate structures of FIG. 4B;

FIG. 4D illustrating removal of the plurality of dummy gates, leavingthe contacts of FIG. 4C and the plurality of fins of FIG. 4A exposed;

FIG. 4E illustrating forming of an inside spacer dielectric linerconformal to the structure of FIG. 4D; and

FIG. 4F illustrating forming of a plurality of permanent gate electrodeson or above the inside spacer dielectric liner of FIG. 4E.

FIG. 5 illustrates a computing device in accordance with oneimplementation of the invention.

DESCRIPTION OF THE EMBODIMENTS

High voltage three-dimensional devices having dielectric liners andmethods of forming high voltage three-dimensional devices havingdielectric liners are described. In the following description, numerousspecific details are set forth, such as specific integration andmaterial regimes, in order to provide a thorough understanding ofembodiments of the present invention. It will be apparent to one skilledin the art that embodiments of the present invention may be practicedwithout these specific details. In other instances, well-known features,such as integrated circuit design layouts, are not described in detailin order to not unnecessarily obscure embodiments of the presentinvention. Furthermore, it is to be understood that the variousembodiments shown in the Figures are illustrative representations andare not necessarily drawn to scale.

One or more embodiments of the present invention are directed to theformation of, or structures including, dielectric liners to enablefabrication of high voltage transistors on aggressively scaledthree-dimensional device architectures, such as aggressively scaled finfield-effect transistor (finFET) architectures. For example, a gatealigned contact process flow fabricated on three-dimensionalsemiconductor bodies may leave little to no margin for device breakdown.As such, substrate silicon consumption to form a thick gate dielectriclayer may no longer be a viable option for forming gate dielectriclayers for such high voltage devices.

One or more embodiments described herein may address issues surroundingenablement of a dual-voltage technology on an aggressively scalednon-planar (e.g., three-dimensional) transistor architecture. As Moore'slaw dictates, a gate pitch should be scaled by a factor of approximately0.7 each generation in order to meet transistor density requirements. Aresult of such pitch scaling may be that isolation thickness between agate contact and source/drain contacts is reduced each generation.System-on-chip (SoC) technologies typically rely on utilizing multiplevoltage rails to enable a needed collateral, particularly if analogand/or RF communication features are present. However, conventionalfabrication approaches may not be able to support such high voltages onhighly scaled process technologies.

More specifically, high voltage transistors on aggressively scaledtechnologies may undergo premature device failure between the gate andsource/drain contact, rather than the desirable gate to substratemechanism. Such premature failure may result from the proximity of thegate to contact separation as well as, possibly, poor insulatorqualities of an isolating spacer material. As an example of the conceptsinvolved, FIG. 1 illustrates cross-sectional views of (A) a standardhigh voltage transistor 100A and (B) a scaled high voltage transistor100B, in accordance with an embodiment of the present invention.

Referring to FIG. 1, high voltage transistors 100A and 100B include gateelectrodes 102A and 102B, respectively, contacts 104A and 104B,respectively, and a high voltage gate dielectric 106A and 106B,respectively, formed on a substrate 108A and 108B, respectively. Asdepicted in FIG. 1, there is a decrease in proximity between the gate102B and contact 104B in the scaled device 100B (compared with device100A) as a result of spacing. Such reduction in spacing may result in anundesirable preferential breakdown path between the gate and contact inthe scaled device.

In a particular example, for illustrative purposes, 22 nm technology maysupport up to 1.8 Volts (V) between the gate and the source and drain(S/D) contacts reliably. However, a 3.3V non-stacked gate solution maynot be supported due to premature failure between the S/D contacts andgate resulting from insufficient gate dielectric material. Thus, futurenodes (e.g., the 14 nm node) may not be able to support even a 1.8V railas supported by 22 nm technology-based devices. One solution forenabling a high-voltage device on the 14 nm node may be to substantiallyrelax the pitch (e.g., to enables contacts to be placed farther from thegate). However, a relaxed pitch may not be compatible with scaleddensities, yielding undesirable area and cost implications. As a furtherexample of the concepts involved, FIG. 2 illustrates cross-sectionalviews of (A) a standard low voltage transistor 200A, (B) a standard highvoltage transistor 200B, (C) a low voltage transistor 200C after scalingof the pitch, and (D) a scaled high voltage transistor 200D, inaccordance with an embodiment of the present invention.

Referring to FIG. 2, low voltage transistors 200A and 200C include gateelectrodes 202A and 202C, respectively, contacts 204A and 204C,respectively, a low voltage gate dielectric 206A and 206C, respectively,and spacers 210A and 210C, respectively, formed on a substrate 208A and208C, respectively. Low voltage transistor 200A may also include someinterlayer dielectric (ILD) material 212A, while low voltage transistor200C may not. Meanwhile, high voltage transistors 200B and 200D includegate electrodes 202B and 202D, respectively, contacts 204B and 204D,respectively, a high voltage gate dielectric 206B and 206D,respectively, and spacers 210B and 210D, respectively, formed on asubstrate 208B and 208D, respectively. High voltage transistor 200B mayalso include some ILD material 212B, while high voltage transistor 200Dmay not. As depicted in FIG. 2, a substantial reduction of the gate tocontact spacing for scaled transistors 200C and 200D is present ascompared with standard transistors 200A and 200B. Such reduction in gateto contact spacing may deleteriously impact reliability and,particularly, high voltage reliability.

Accordingly, one or more embodiments described herein enable highvoltage gate to source/drain support through the fabrication of aninside spacer process. In a specific embodiment, an approach utilizes areplacement metal gate process flow to provide additional dielectricmargin for scaled high voltage devices. As an example of the conceptsinvolved, FIG. 3 illustrates cross-sectional views of (A) a standardhigh voltage transistor 300A, (B) a scaled high voltage transistor 300B,and (C) a scaled high voltage transistor 300C having an inner dielectricspacer, in accordance with an embodiment of the present invention.

Referring to FIG. 3, high voltage transistors 300A, 300B and 300Cinclude gate electrodes 302A, 302B and 302C, respectively, contacts304A, 304B and 304C, respectively, a high voltage gate dielectric 306A,306B and 306C, respectively, and spacers 310A, 310B and 310C,respectively, formed on a substrate 308A, 308B and 308C, respectively.Standard high voltage transistor 300A may also include some ILD material312A, while scaled high voltage transistors 300B and 300C may not.Furthermore, in accordance with an embodiment of the present invention,scaled high voltage transistor 300C includes inner spacers 314C, e.g.,in the form of an inner dielectric liner layer.

More specifically, referring again to FIG. 3, standard high voltagetransistor 300A has a gate dielectric layer (306A) that is a hybridcomposition of thermally-grown oxide and a high-k dielectric layer. Thespacing between the contact 304A and the gate material 302A may includea conformally-deposited high-k dielectric layer (306A along thesidewalls), a spacer and or nitride etch stop layer (NESL) as 310A, andresidual ILD oxide 312A. Scaled high voltage transistor 300Baccommodates a pitch reduction that places the contacts 304B close tothe gate 302B. The configuration of device 300B, while likely suitablefor a low-voltage transistor, may be incompatible with high voltageoperation due to poor reliability, as described above in associationwith FIGS. 1 and 2. In particular, referring to device 300B, as comparedwith 300A, the spacer 310B thickness has been decreased, and the ILD hasbeen substantially reduced (or even eliminated, as shown). In anembodiment, as shown, the scaled high voltage transistor 300C includes ahigh voltage gate dielectric 306C (which is deposited to form an insidespacer 314C) in addition to a high-k dielectric layer. In one suchembodiment, the deposition of two conformal layers, as opposed to onlythe high-k layer provides the margin needed to support reliablehigh-voltage operation. Thus, the configuration of 300C, as comparedwith 300B, increases the gate 302C to contact 304C spacing, which mayrequired to support relatively high voltage supplies.

As such, the fabrication of a high voltage gate dielectric layer mayinclude the formation of more than one liner dielectric layers toprovide sidewall spacing between a gate material and adjacent sourceand/or drain contacts. As an example, FIGS. 4A-4F illustratecross-sectional views representing various operations in a method offabricating a semiconductor structure, the method including generating aoxide liner spacer, in accordance with an embodiment of the presentinvention.

Referring to FIG. 4A, a starting structure 400 includes a plurality offins 404 (e.g., three-dimensional semiconductor bodies) formed above asubstrate 402. The fins are separated by an isolation dielectric layer406.

In an embodiment, the plurality of fins 404 is formed from a bulksubstrate 402, as depicted in FIG. 4A. In one such example, bulksubstrate 402 and, hence, the plurality of fins 404 may be composed of asemiconductor material that can withstand a manufacturing process and inwhich charge can migrate. In an embodiment, bulk substrate 402 iscomposed of a crystalline silicon, silicon/germanium or germanium layerdoped with a charge carrier, such as but not limited to phosphorus,arsenic, boron or a combination thereof. In one embodiment, theconcentration of silicon atoms in bulk substrate 402 is greater than97%. In another embodiment, bulk substrate 402 is composed of anepitaxial layer grown atop a distinct crystalline substrate, e.g. asilicon epitaxial layer grown atop a boron-doped bulk siliconmono-crystalline substrate. Bulk substrate 402 may alternatively becomposed of a group III-V material. In an embodiment, bulk substrate 402is composed of a III-V material such as, but not limited to, galliumnitride, gallium phosphide, gallium arsenide, indium phosphide, indiumantimonide, indium gallium arsenide, aluminum gallium arsenide, indiumgallium phosphide, or a combination thereof. In one embodiment, bulksubstrate 402 is composed of a III-V material and the charge-carrierdopant impurity atoms are ones such as, but not limited to, carbon,silicon, germanium, oxygen, sulfur, selenium or tellurium. In anembodiment, bulk substrate 402 and, hence, the plurality of fins 404 isundoped or only lightly doped. In an embodiment, at least a portion ofeach of the plurality of fins 404 is strained, either at this stage orat a later stage.

Alternatively, the substrate includes an upper epitaxial layer and alower bulk portion, either of which may be composed of a single crystalof a material which may include, but is not limited to, silicon,germanium, silicon-germanium or a III-V compound semiconductor material.An intervening insulator layer composed of a material which may include,but is not limited to, silicon dioxide, silicon nitride or siliconoxy-nitride may be disposed between the upper epitaxial layer and thelower bulk portion.

Isolation dielectric layer 406 may be composed of a material suitable toultimately electrically isolate, or contribute to the isolation of, apermanent gate structure from an underlying bulk substrate. For example,in one embodiment, the isolation dielectric layer 406 is composed of adielectric material such as, but not limited to, silicon dioxide,silicon oxy-nitride, silicon nitride, or carbon-doped silicon nitride.It is to be understood that a global layer may be formed and thenrecessed to ultimately expose the active portions of the plurality offins 404.

Referring to FIG. 4B, a plurality of dummy gate structures 408, such aspolysilicon gate structures, are formed orthogonal to the plurality offins 404 and above or on isolation dielectric layer 406. Spacers 410 areformed adjacent the sidewalls of each of the plurality of dummy gatestructures 408. The inset to FIG. 4B provides a view with the gatestructures running into and out of the page. Doped tips and/or sourceand drain regions may be formed in the plurality of fins 404 at thisstage, using the plurality of dummy gate structures 408 and spacers 410as a mask during doping operations.

Dummy gate structures 408 are, in an embodiment, composed of a materialsuitable for removal at a replacement gate operation, as describedbelow. In one embodiment, dummy gates structures 408 are composed ofpolycrystalline silicon, amorphous silicon, silicon dioxide, siliconnitride, or a combination thereof. In another embodiment, a protectivecapping layer (not shown), such as a silicon dioxide or silicon nitridelayer, is formed above dummy gates structures 408. In an embodiment, anunderlying dummy gate dielectric layer (also not shown) is included. Inan embodiment, dummy gates structures 408.

Spacers 410 may be composed of a material suitable to ultimatelyelectrically isolate, or contribute to the isolation of, a permanentgate structure from adjacent conductive contacts. For example, in oneembodiment, the spacers 410 are composed of a dielectric material suchas, but not limited to, silicon dioxide, silicon oxy-nitride, siliconnitride, or carbon-doped silicon nitride.

As mentioned above, dopant or diffusion regions may be formed in thefins. Such dopant or diffusion regions are, in one embodiment, heavilydoped regions of the plurality of fins 404. In one embodiment, theplurality of fins 404 is composed of a group IV material and one or moreportions are doped with boron, arsenic, phosphorus, indium or acombination thereof. In another embodiment, the plurality of fins 404 iscomposed of a group III-V material and one or more portions are dopedwith carbon, silicon, germanium, oxygen, sulfur, selenium or tellurium.

Referring to FIG. 4C, contacts 412 (e.g., metal contacts) and/orisolation regions 414 (e.g., an oxide, nitride or carbide dielectricmaterial) are formed between gates of the plurality of dummy gatestructures 408 and spacers 410. The positioning of contacts 412 andisolation regions 414 may be layout dependent. The inset to FIG. 4Cprovides a broader view of such an arrangement of contacts 412 andisolation regions 414, in accordance with an embodiment. It is to beunderstood that the contacts 412 at this stage may alternatively bedummy contacts (e.g., a dummy dielectric material) that are laterreplaced with a metal contact material.

In an embodiment, the contacts 412 are formed by deposition andplanarization, e.g., by CMP, of a conductive material. Contacts 412 maybe composed of a conductive material. In an embodiment, contacts 412 arecomposed of a metal species. The metal species may be a pure metal, suchas nickel or cobalt, or may be an alloy such as a metal-metal alloy or ametal-semiconductor alloy (e.g., such as a silicide material).

Isolation regions 414 may be composed of a material suitable toultimately electrically isolate, or contribute to the isolation of, apermanent gate structure from other gate structures or contactstructures. For example, in one embodiment, the isolation dielectricregions 414 are composed of a dielectric material such as, but notlimited to, silicon dioxide, silicon oxy-nitride, silicon nitride, orcarbon-doped silicon nitride.

Referring to FIG. 4D, the plurality of dummy gates 408 is removed,leaving contacts 412, isolation regions 414 and spacers 410, andexposing the plurality of fins 404 and the isolation dielectric layer406. The inset to FIG. 4D corresponds with the inset to FIG. 4C. Contactregions 412A orthogonal to the previous positioning of dummy gates 408are also depicted.

Thus, the exposed plurality of dummy gates 408 may ultimately bereplaced in a replacement gate process scheme. In such a scheme, dummygate material such as polysilicon or silicon nitride pillar material,may be removed and replaced with permanent gate electrode material. Inone such embodiment, a permanent gate dielectric layer is also formed inthis process, as opposed to being carried through from earlierprocessing.

In an embodiment, the plurality of dummy gates 408 is removed by a dryetch or wet etch process. In one embodiment, the plurality of dummygates 408 is composed of polycrystalline silicon or amorphous siliconand is removed with a dry etch process comprising SF₆. In anotherembodiment, the plurality of dummy gates 408 is composed ofpolycrystalline silicon or amorphous silicon and is removed with a wetetch process comprising aqueous NH₄OH or tetramethylammonium hydroxide.In one embodiment, the plurality of dummy gates 408 is composed ofsilicon nitride and is removed with a wet etch comprising aqueousphosphoric acid.

Referring to FIG. 4E, an inside spacer dielectric liner 416 (e.g., aninside spacer oxide liner) is formed conformal to the structure of FIG.4D. The inset to FIG. 4E corresponds with the inset to FIG. 4D.

In an embodiment, the inside spacer dielectric liner 416 is a highquality, electrical gate oxide formed by atomic layer deposition (ALD)or other conformal oxide liner deposition. In one such embodiment, theinside spacer dielectric liner is a silicon oxide (e.g., SiO₂) materiallayer. As illustrated in FIG. 4E, an increase in effective spacerthickness is achieved by use of the inside spacer dielectric liner 416.As is also illustrated, since the inside spacer dielectric liner 416 isdeposited using atomic layer (or other conformal) deposition, the insidespacer dielectric liner 416 not only covers the exposed fins 404, butthe sidewall of the spacers 410 as well. In one embodiment, the spacer410 material is very thin and of poor electrical quality (with a lowerbreakdown voltage than an equivalent thickness of electrical oxide) and,so, the presence of the inside spacer dielectric liner 416 provides amuch improved electrical barrier. By depositing a high-quality oxidewith ALD to line the spacer sidewall, the breakdown voltage of thespacer material may be increased beyond the gate-to-body breakdownvoltage. In one such embodiment, such a configuration is suitable for anintrinsically-reliable transistor. Significantly, as compared with athermal SiO₂ process which would utilize fin consumption to fabricate athick oxide layer, deposition of the inside spacer dielectric liner 416consumes little to none of the fin silicon.

Following formation of the inside spacer dielectric liner 416, althoughnot depicted, dual gate oxide formation may be performed. Specifically,the fabrication of a thin gate dielectric transistor (e.g., a lowvoltage transistor) involves, following formation of inside spacerdielectric liner 416 in all device locations, a masking of locations ofthick gate dielectric transistors (e.g., high voltage transistors) whileexposing the locations of the low voltage transistors. An etch processis performed to remove portions of the inside spacer dielectric liner416 in locations where low voltage devices will be fabricated. Then, thelocations of the high voltage devices are re-exposed by mask removal anda second gate dielectric layer, e.g., a high-k gate dielectric layer, isformed in all locations. Thus, in an embodiment, low voltage transistorsinclude the second gate dielectric layer but not the inside spacerdielectric liner 416, while high voltage transistors include both thesecond gate dielectric layer and the inside spacer dielectric liner 416.

In an embodiment, the second gate dielectric layer is composed of ahigh-K material. For example, in one embodiment, the second gatedielectric layer is composed of a material such as, but not limited to,hafnium oxide, hafnium oxy-nitride, hafnium silicate, lanthanum oxide,zirconium oxide, zirconium silicate, tantalum oxide, barium strontiumtitanate, barium titanate, strontium titanate, yttrium oxide, aluminumoxide, lead scandium tantalum oxide, lead zinc niobate, or a combinationthereof. Furthermore, a portion of the second gate dielectric layer mayinclude a thin layer of thermal oxide (e.g., 1-2 monolayers) formed fromthe top few layers of the fins 404 in locations where the inside spacerdielectric liner 416 has been removed, e.g., in region of the lowvoltage devices. In an embodiment, the second gate dielectric layer iscomposed of a top high-k portion and a lower portion composed of anoxide of a semiconductor material. In one embodiment, the second gatedielectric layer is composed of a top portion of hafnium oxide and abottom portion of silicon dioxide or silicon oxy-nitride.

Referring to FIG. 4F, a plurality of permanent gate electrodes 418(e.g., metal gate electrodes) is formed in the openings formed uponremoval of the plurality of dummy gates 408, and on or above the insidespacer dielectric liner 416. The metal permanent gate material alongwith the inside spacer dielectric liner 416 may be planarized tore-expose the contacts 412, isolation regions 414 and (possible) thespacers 410, as depicted in FIG. 4F. The inset to FIG. 4F correspondswith the inset to FIG. 4E.

In an embodiment, the metal permanent gate material along with theinside spacer dielectric liner 416 are planarized by a chemicalmechanical planarization (CMP) process operation. In one suchembodiment, the CMP process operation involves polishing the metalpermanent gate material and the inside spacer dielectric liner 416 on apolishing pad using a slurry. In another embodiment, a dry etch processis used.

In an embodiment, plurality of permanent gate electrodes 418 is composedof a metal material. In one such embodiment, the plurality of permanentgate electrodes 418 is composed of a metal layer such as, but notlimited to, metal nitrides, metal carbides, metal silicides, metalaluminides, hafnium, zirconium, titanium, tantalum, aluminum, ruthenium,palladium, platinum, cobalt, nickel or conductive metal oxides. In aspecific embodiment, the plurality of permanent gate electrodes 418 iscomposed of a non-workfunction-setting fill material formed above ametal workfunction-setting layer. In an embodiment, the plurality ofpermanent gate electrodes 418.

The processes described above may be used to fabricate one or aplurality of semiconductor devices. The semiconductor devices may betransistors or like devices. For example, in an embodiment, thesemiconductor devices are a metal-oxide semiconductor (MOS) transistorsfor logic or memory, or are bipolar transistors. Also, in an embodiment,the semiconductor devices have a three-dimensional architecture, such asa trigate device, an independently accessed double gate device, or aFIN-FET.

Overall, the difficulty of high-voltage and/or analog circuitry scalingmay become more and more evident as the pitches continue to decrease andbecome discretized due to patterning restrictions. The above describedimplementation may be useful for a process that implements multiplevoltage supplies in circuit designs, e.g., in SoC products at the 22 nmnode or less.

In a specific implementation, in an embodiment, a nominal oxidethickness for a 1.8V transistor is approximately 3.5-4 nm. For highvoltage technology, there is substantial margin between the gate and S/Dcontacts (e.g., 35 nm), enabling the preferred breakdown path to occurbetween the gate and the body. On subsequent nodes, the gate to contactmargin is reduced to approximately 4-7 nm. The 4-7 nm of dielectricisolating the gate from the contact may not be as high quality of anoxide as the 3.5-4 nm gate dielectric isolating the gate from thechannel and, therefore, presents a risk for reliability. The sametransistor having an addition oxide liner, as described above, providesa margin between gate and contact that is improved by the addition ofapproximately 2.5-3.5 nm atomic layer deposition (ALD) gate oxidedielectric, improving the contact to gate spacing to greater thanapproximately 7-10 nm.

In association with an embodiment, matched transistor performance of adevice including an oxide-liner high-voltage transistor is achieved ascompared with a conventional replacement gate integration scheme. Inassociation with one embodiment, reliability results shown indicate asubstantial improvement in a shape factor for an oxide liner thick-gateflow compared with a standard flow. In association with an embodiment,thick-gate NMOS reliability data indicates improvement in shape factorutilizing an oxide liner flow. Breakdown events may occur over a smallervoltage range, reducing the failure distribution versus time and voltagecompared to a standard flow.

Perhaps more generally, one or more embodiments of the present inventionare directed to a gate aligned contact process. Such a process may beimplemented to form contact structures for semiconductor structurefabrication, e.g., for integrated circuit fabrication. In an embodiment,a contact pattern is formed as aligned to an existing gate pattern. Bycontrast, conventional approaches typically involve an additionallithography process with tight registration of a lithographic contactpattern to an existing gate pattern in combination with selectivecontact etches. For example, a conventional process may includepatterning of a poly (gate) grid with separately patterning of contactsand contact plugs.

Again, in a more general aspect, in accordance with one or moreembodiments described herein, a method of contact formation involvesformation of a contact pattern which is perfectly aligned to an existinggate pattern while eliminating the use of a lithographic step withexceedingly tight registration budget. In one such embodiment, thisapproach enables the use of intrinsically highly selective wet etching(e.g., versus conventionally implemented dry or plasma etching) togenerate contact openings. In an embodiment, a contact pattern is formedby utilizing an existing gate pattern in combination with a contact pluglithography operation. In one such embodiment, the approach enableselimination of the need for an otherwise critical lithography operationto generate a contact pattern, as used in conventional approaches. In anembodiment, a trench contact grid is not separately patterned, but israther formed between poly (gate) lines. For example, in one suchembodiment, a trench contact grid is formed subsequent to gate gratingpatterning but prior to gate grating cuts.

FIG. 5 illustrates a computing device 500 in accordance with oneimplementation of the invention. The computing device 500 houses a board502. The board 502 may include a number of components, including but notlimited to a processor 504 and at least one communication chip 506. Theprocessor 504 is physically and electrically coupled to the board 502.In some implementations the at least one communication chip 506 is alsophysically and electrically coupled to the board 502. In furtherimplementations, the communication chip 506 is part of the processor504.

Depending on its applications, computing device 500 may include othercomponents that may or may not be physically and electrically coupled tothe board 502. These other components include, but are not limited to,volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flashmemory, a graphics processor, a digital signal processor, a cryptoprocessor, a chipset, an antenna, a display, a touchscreen display, atouchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, anaccelerometer, a gyroscope, a speaker, a camera, and a mass storagedevice (such as hard disk drive, compact disk (CD), digital versatiledisk (DVD), and so forth).

The communication chip 506 enables wireless communications for thetransfer of data to and from the computing device 500. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 506 may implement anyof a number of wireless standards or protocols, including but notlimited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE,GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well asany other wireless protocols that are designated as 3G, 4G, 5G, andbeyond. The computing device 500 may include a plurality ofcommunication chips 506. For instance, a first communication chip 506may be dedicated to shorter range wireless communications such as Wi-Fiand Bluetooth and a second communication chip 506 may be dedicated tolonger range wireless communications such as GPS, EDGE, GPRS, CDMA,WiMAX, LTE, Ev-DO, and others.

The processor 504 of the computing device 500 includes an integratedcircuit die packaged within the processor 504. In some implementationsof the invention, the integrated circuit die of the processor includesone or more devices, such as MOS-FET transistors built in accordancewith implementations of the invention. The term “processor” may refer toany device or portion of a device that processes electronic data fromregisters and/or memory to transform that electronic data into otherelectronic data that may be stored in registers and/or memory.

The communication chip 506 also includes an integrated circuit diepackaged within the communication chip 506. In accordance with anotherimplementation of the invention, the integrated circuit die of thecommunication chip includes one or more devices, such as MOS-FETtransistors built in accordance with implementations of the invention.

In further implementations, another component housed within thecomputing device 500 may contain an integrated circuit die that includesone or more devices, such as MOS-FET transistors built in accordancewith implementations of the invention.

In various implementations, the computing device 500 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice 500 may be any other electronic device that processes data.

Thus, embodiments of the present invention include high voltagethree-dimensional devices having dielectric liners and methods offorming high voltage three-dimensional devices having dielectric liners.

In an embodiment, a semiconductor structure includes a first fin activeregion and a second fin active region disposed above a substrate. Afirst gate structure is disposed above a top surface of, and alongsidewalls of, the first fin active region. The first gate structureincludes a first gate dielectric, a first gate electrode, and firstspacers. The first gate dielectric is composed of a first dielectriclayer disposed on the first fin active region and along sidewalls of thefirst spacers, and a second, different, dielectric layer disposed on thefirst dielectric layer and along sidewalls of the first spacers. Thesemiconductor structure also includes a second gate structure disposedabove a top surface of, and along sidewalls of, the second fin activeregion. The second gate structure includes a second gate dielectric, asecond gate electrode, and second spacers. The second gate dielectric iscomposed of the second dielectric layer disposed on the second finactive region and along sidewalls of the second spacers.

In one embodiment, the first fin active region and the second fin activeregion are disposed directly on the substrate.

In one embodiment, the substrate is a bulk single crystalline siliconsubstrate, and the first fin active region and the second fin activeregion are composed of single crystalline silicon.

In one embodiment, the first dielectric layer is composed of siliconoxide, and the second dielectric layer is composed of a high-k material.

In one embodiment, the second fin active region, but not the first finactive region, includes a thin layer of thermal oxide at a top surfaceof the fin active region.

In one embodiment, the semiconductor structure further includes a firstpair of contacts disposed directly adjacent to the first spacers, and asecond pair of contacts disposed directly adjacent to the secondspacers.

In one embodiment, the first and second gate electrodes are metal gateelectrodes.

In one embodiment, the semiconductor structure further includes a highvoltage device including the first gate structure, and a low voltagedevice including the second gate structure.

In an embodiment, a semiconductor structure includes a first pluralityof fin active regions and a second plurality of fin active regionsdisposed above a substrate. The semiconductor structure also includes ahigh voltage device having a first gate dielectric and a first gateelectrode. The first gate dielectric is composed of a first dielectriclayer disposed on the first plurality of fin active regions and alongsidewalls of the first gate electrode and a second, different,dielectric layer disposed on the first dielectric layer and alongsidewalls of the first gate electrode. The semiconductor structure alsoincludes a low voltage device having a second gate dielectric and asecond gate electrode. The second gate dielectric is composed of thesecond dielectric layer disposed on the second plurality of fin activeregions and along sidewalls of the second gate electrode.

In one embodiment, the first plurality of fin active regions and thesecond plurality of fin active regions are disposed directly on thesubstrate.

In one embodiment, the substrate is a bulk single crystalline siliconsubstrate, and the first plurality of fin active regions and the secondplurality of fin active regions are composed of single crystallinesilicon.

In one embodiment, the first dielectric layer is composed of siliconoxide, and the second dielectric layer is composed of a high-k material.

In one embodiment, the second plurality of fin active regions, but notthe first plurality of fin active regions, includes a thin layer ofthermal oxide at a top surface of the plurality of fin active regions.

In one embodiment, the semiconductor structure further includes a firstpair of contacts disposed directly adjacent to the first spacers, and asecond pair of contacts disposed directly adjacent to the secondspacers.

In one embodiment, the first and second gate electrodes are metal gateelectrodes.

In an embodiment, a method of fabricating a semiconductor structureincludes forming a first plurality of first fin active regions and asecond plurality of fin active regions above a substrate. A plurality ofdummy gate structures is formed above the first and second pluralitiesof fin active regions. Spacers are formed adjacent the sidewalls of eachof the plurality of dummy gate structures. The dummy gate structures areremoved to form a plurality of gate locations defined by the spacers. Afirst conformal dielectric layer is formed in the plurality of gatelocations. The first conformal dielectric layer is removed from a firstof the plurality of gate locations, but not from a second of theplurality of gate locations. Subsequently, a second conformal dielectriclayer is formed in the plurality of gate locations. Subsequently, a lowvoltage device is formed in the first of the plurality of gate locationsand a high voltage device is formed in the second of the plurality ofgate locations.

In one embodiment, the first plurality of fin active regions and thesecond plurality of fin active regions are formed directly on thesubstrate.

In one embodiment, the substrate is a bulk single crystalline siliconsubstrate, and the first plurality of fin active regions and the secondplurality of fin active regions are formed from the bulk singlecrystalline silicon substrate.

In one embodiment, the first dielectric layer is composed of siliconoxide, and the second dielectric layer is composed of a high-k material.

In one embodiment, the method further includes forming a thin layer ofthermal oxide at a top surface of the plurality of second fin activeregions but not the first plurality of fin active regions.

In one embodiment, the method further includes forming a first pair ofcontacts directly adjacent to the first spacers, and forming a secondpair of contacts directly adjacent to the second spacers.

In one embodiment, forming the low and high voltage devices comprisesforming metal gate electrodes.

In one embodiment, forming the second conformal dielectric layercomprises using atomic layer deposition (ALD) to form both layers.

What is claimed is:
 1. A semiconductor structure, comprising: a firstfin active region and a second fin active region disposed above asubstrate; a first gate structure disposed above a top surface of, andalong sidewalls of, the first fin active region, the first gatestructure comprising a first gate dielectric, a first gate electrode,and first spacers, wherein the first gate dielectric comprises a firstdielectric layer disposed on the first fin active region and alongsidewalls of the first spacers and a second, different, dielectric layerdisposed on the first dielectric layer and along sidewalls of the firstspacers; and a second gate structure disposed above a top surface of,and along sidewalls of, the second fin active region, the second gatestructure comprising a second gate dielectric, a second gate electrode,and second spacers, wherein the second gate dielectric comprises thesecond dielectric layer disposed on the second fin active region andalong sidewalls of the second spacers.
 2. The semiconductor structure ofclaim 1, wherein the first fin active region and the second fin activeregion are disposed directly on the substrate.
 3. The semiconductorstructure of claim 2, wherein the substrate is a bulk single crystallinesilicon substrate, and the first fin active region and the second finactive region comprise single crystalline silicon.
 4. The semiconductorstructure of claim 1, wherein the first dielectric layer comprisessilicon oxide, and the second dielectric layer comprises a high-kmaterial.
 5. The semiconductor structure of claim 1, wherein the secondfin active region, but not the first fin active region, comprises a thinlayer of thermal oxide at a top surface of the fin active region.
 6. Thesemiconductor structure of claim 1, further comprising: a first pair ofcontacts disposed directly adjacent to the first spacers; and a secondpair of contacts disposed directly adjacent to the second spacers. 7.The semiconductor structure of claim 1, wherein the first and secondgate electrodes are metal gate electrodes.
 8. The semiconductorstructure of claim 1, further comprising: a high voltage devicecomprising the first gate structure; and a low voltage device comprisingthe second gate structure.
 9. A semiconductor structure, comprising: afirst plurality of fin active regions and a second plurality of finactive regions disposed above a substrate; a high voltage devicecomprising a first gate dielectric and a first gate electrode, whereinthe first gate dielectric comprises a first dielectric layer disposed onthe first plurality of fin active regions and along sidewalls of thefirst gate electrode and a second, different, dielectric layer disposedon the first dielectric layer and along sidewalls of the first gateelectrode; and a low voltage device comprising a second gate dielectricand a second gate electrode, wherein the second gate dielectriccomprises the second dielectric layer disposed on the second pluralityof fin active regions and along sidewalls of the second gate electrode.10. The semiconductor structure of claim 9, wherein the first pluralityof fin active regions and the second plurality of fin active regions aredisposed directly on the substrate.
 11. The semiconductor structure ofclaim 10, wherein the substrate is a bulk single crystalline siliconsubstrate, and the first plurality of fin active regions and the secondplurality of fin active regions comprise single crystalline silicon. 12.The semiconductor structure of claim 9, wherein the first dielectriclayer comprises silicon oxide, and the second dielectric layer comprisesa high-k material.
 13. The semiconductor structure of claim 9, whereinthe second plurality of fin active regions, but not the first pluralityof fin active regions, comprises a thin layer of thermal oxide at a topsurface of the plurality of fin active regions.
 14. The semiconductorstructure of claim 9, further comprising: a first pair of contactsdisposed directly adjacent to the first spacers; and a second pair ofcontacts disposed directly adjacent to the second spacers.
 15. Thesemiconductor structure of claim 9, wherein the first and second gateelectrodes are metal gate electrodes.
 16. A method of fabricating asemiconductor structure, the method comprising: forming a firstplurality of first fin active regions and a second plurality of finactive regions above a substrate; forming a plurality of dummy gatestructures above the first and second pluralities of fin active regions;forming spacers adjacent the sidewalls of each of the plurality of dummygate structures; removing the dummy gate structures to form a pluralityof gate locations defined by the spacers; forming a first conformaldielectric layer in the plurality of gate locations; removing the firstconformal dielectric layer from a first of the plurality of gatelocations, but not from a second of the plurality of gate locations;and, subsequently, forming a second conformal dielectric layer in theplurality of gate locations; and, subsequently, forming a low voltagedevice in the first of the plurality of gate locations and a highvoltage device in the second of the plurality of gate locations.
 17. Themethod of claim 16, wherein the first plurality of fin active regionsand the second plurality of fin active regions are formed directly onthe substrate.
 18. The method of claim 17, wherein the substrate is abulk single crystalline silicon substrate, and the first plurality offin active regions and the second plurality of fin active regions areformed from the bulk single crystalline silicon substrate.
 19. Themethod of claim 16, wherein the first dielectric layer comprises siliconoxide, and the second dielectric layer comprises a high-k material. 20.The method of claim 16, further including: forming a thin layer ofthermal oxide at a top surface of the plurality of second fin activeregions but not the first plurality of fin active regions.
 21. Themethod of claim 16, further comprising: forming a first pair of contactsdirectly adjacent to the first spacers; and forming a second pair ofcontacts directly adjacent to the second spacers.
 22. The method ofclaim 16, wherein forming the low and high voltage devices comprisesforming metal gate electrodes.
 23. The method of claim 16, whereinforming the second conformal dielectric layer comprises using atomiclayer deposition (ALD) to form both layers.